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PDTA113ET,215

PDTA113ET,215 Nexperia USA Inc.


PDTA113E_SER.pdf Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.07 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details PDTA113ET,215 Nexperia USA Inc.

Description: TRANS PREBIAS PNP 50V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms, Grade: Automotive, Qualification: AEC-Q100.

Weitere Produktangebote PDTA113ET,215 nach Preis ab 0.044 EUR bis 0.42 EUR

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Preis ohne MwSt
PDTA113ET,215 PDTA113ET,215 Hersteller : Nexperia PDTA113E_SER-2938331.pdf Bipolar Transistors - Pre-Biased PDTA113ET/SOT23/TO-236AB
auf Bestellung 2631 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
135+0.39 EUR
179+ 0.29 EUR
426+ 0.12 EUR
1000+ 0.073 EUR
3000+ 0.06 EUR
9000+ 0.047 EUR
24000+ 0.044 EUR
Mindestbestellmenge: 135
PDTA113ET,215 PDTA113ET,215 Hersteller : Nexperia USA Inc. PDTA113E_SER.pdf Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
63+0.42 EUR
91+ 0.29 EUR
167+ 0.16 EUR
500+ 0.12 EUR
1000+ 0.085 EUR
Mindestbestellmenge: 63
PDTA113ET,215 Hersteller : NXP PHGLS19170-1.pdf?t.download=true&u=5oefqw Description: NXP - PDTA113ET,215 - SCHOTTKY RECTIFIER DIODES
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 483400 Stücke:
Lieferzeit 14-21 Tag (e)
PDTA113ET,215 Hersteller : NEXPERIA PHGLS19170-1.pdf?t.download=true&u=5oefqw Description: NEXPERIA - PDTA113ET,215 - SCHOTTKY RECTIFIER DIODES
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 483400 Stücke:
Lieferzeit 14-21 Tag (e)
PDTA113ET,215 PDTA113ET,215 Hersteller : Nexperia 2971pdta113e_ser.pdf Trans Digital BJT PNP 50V 100mA 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
PDTA113ET,215 PDTA113ET,215 Hersteller : NEXPERIA 2971pdta113e_ser.pdf Trans Digital BJT PNP 50V 100mA 250mW Automotive 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
PDTA113ET,215 PDTA113ET,215 Hersteller : NEXPERIA PDTA113E_SER.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Anzahl je Verpackung: 25 Stücke
Produkt ist nicht verfügbar
PDTA113ET,215 PDTA113ET,215 Hersteller : NEXPERIA PDTA113E_SER.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Produkt ist nicht verfügbar