PDTA123JMB,315 Nexperia USA Inc.
auf Bestellung 90000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11225+ | 0.074 EUR |
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Technische Details PDTA123JMB,315 Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Supplier Device Package: DFN1006B-3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 180 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote PDTA123JMB,315 nach Preis ab 0.074 EUR bis 0.074 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PDTA123JMB,315 | Hersteller : NXP USA Inc. |
 Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Bulk Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1006B-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 190000 Stücke: Lieferzeit 21-28 Tag (e) |
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| PDTA123JMB,315 | Hersteller : NEXPERIA |
Description: NEXPERIA - PDTA123JMB,315 - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTA123JMB,315 | Hersteller : NXP |
Description: NXP - PDTA123JMB,315 - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTA123JMB,315 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1006B-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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PDTA123JMB,315 | Hersteller : Nexperia |
Bipolar Transistors - Pre-Biased PDTA123JMB/SOT883B/XQFN3 |
Produkt ist nicht verfügbar |