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PDTA123YMB,315

PDTA123YMB,315 Nexperia USA Inc.


PDTA123YMB.pdf Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: DFN1006B-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10000+0.085 EUR
Mindestbestellmenge: 10000
Produktrezensionen
Produktbewertung abgeben

Technische Details PDTA123YMB,315 Nexperia USA Inc.

Description: TRANS PREBIAS PNP 50V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V, Supplier Device Package: DFN1006B-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 180 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Grade: Automotive, Qualification: AEC-Q100.

Weitere Produktangebote PDTA123YMB,315 nach Preis ab 0.081 EUR bis 0.65 EUR

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Preis ohne MwSt
PDTA123YMB,315 PDTA123YMB,315 Hersteller : Nexperia USA Inc. PDTA123YMB.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: DFN1006B-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
40+0.65 EUR
58+ 0.45 EUR
119+ 0.22 EUR
500+ 0.18 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
5000+ 0.1 EUR
Mindestbestellmenge: 40
PDTA123YMB,315 PDTA123YMB,315 Hersteller : Nexperia PDTA123YMB-2938112.pdf Bipolar Transistors - Pre-Biased PDTA123YMB/SOT883B/XQFN3
auf Bestellung 9158 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
80+0.65 EUR
115+ 0.46 EUR
278+ 0.19 EUR
1000+ 0.11 EUR
2500+ 0.1 EUR
10000+ 0.086 EUR
20000+ 0.081 EUR
Mindestbestellmenge: 80
PDTA123YMB,315 PDTA123YMB,315 Hersteller : NEXPERIA 14477585874560pdta123ymb.pdfcidbrand_nxpdatafeed-web_third_par.pdfcidbrand_nxpd.pdf Trans Digital BJT PNP 50V 100mA 250mW Automotive 3-Pin DFN-B T/R
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