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PDTA143XMB,315

PDTA143XMB,315 Nexperia USA Inc.


PDTA143XMB.pdf Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS
Packaging: Bulk
Part Status: Active
auf Bestellung 19986 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11181+0.072 EUR
Mindestbestellmenge: 11181
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Technische Details PDTA143XMB,315 Nexperia USA Inc.

Description: TRANS PREBIAS PNP 50V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Supplier Device Package: DFN1006B-3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 180 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Grade: Automotive, Qualification: AEC-Q100.

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PDTA143XMB,315 PDTA143XMB,315 Hersteller : Nexperia USA Inc. PDTA143XMB.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1006B-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q100
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PDTA143XMB,315 PDTA143XMB,315 Hersteller : Nexperia PDTA143XMB-2938115.pdf Digital Transistors PDTA143XMB/SOT883B/XQFN3
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