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PDTB114ETVL

PDTB114ETVL NEXPERIA


2589718408349206pdtb1xxxt_ser.pdf Hersteller: NEXPERIA
Trans Digital BJT PNP 50V 500mA 460mW Automotive 3-Pin SOT-23 T/R
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Technische Details PDTB114ETVL NEXPERIA

Description: TRANS PREBIAS PNP 50V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V, Supplier Device Package: TO-236AB, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 320 mW, Frequency - Transition: 140 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms.

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PDTB114ETVL PDTB114ETVL Hersteller : Nexperia USA Inc. PDTB1XXXT_SER.pdf Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 140 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
PDTB114ETVL PDTB114ETVL Hersteller : Nexperia PDTB1XXXT_SER-2938398.pdf Digital Transistors PDTB114ET/SOT23/TO-236AB
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