PDTC114ET-QVL NEXPERIA
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Anzahl je Verpackung: 25 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Anzahl je Verpackung: 25 Stücke
auf Bestellung 9950 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1350+ | 0.053 EUR |
2000+ | 0.036 EUR |
2500+ | 0.029 EUR |
3050+ | 0.024 EUR |
3225+ | 0.022 EUR |
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Technische Details PDTC114ET-QVL NEXPERIA
Description: TRANS PREBIAS NPN 50V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 230 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PDTC114ET-QVL nach Preis ab 0.022 EUR bis 0.34 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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PDTC114ET-QVL | Hersteller : NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 30 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
auf Bestellung 9950 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTC114ET-QVL | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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PDTC114ET-QVL | Hersteller : Nexperia | Digital Transistors PDTC114ET-Q/SOT23/TO-236AB |
auf Bestellung 7734 Stücke: Lieferzeit 14-28 Tag (e) |
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PDTC114ET-QVL | Hersteller : Nexperia | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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PDTC114ET-QVL | Hersteller : NEXPERIA | Trans Digital BJT NPN 50V 100mA 250mW |
Produkt ist nicht verfügbar |