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PDTC123JQAZ

PDTC123JQAZ NEXPERIA


3198pdtc143x_123j_143z_114yqa_ser.pdf Hersteller: NEXPERIA
Trans Digital BJT NPN 50V 100mA 440mW Automotive 3-Pin DFN-D EP T/R
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Technische Details PDTC123JQAZ NEXPERIA

Description: TRANS PREBIAS NPN 50V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Supplier Device Package: DFN1010D-3, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 280 mW, Frequency - Transition: 230 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Qualification: AEC-Q101.

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PDTC123JQAZ PDTC123JQAZ Hersteller : Nexperia USA Inc. PDTC143X_123J_143Z_114YQA_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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PDTC123JQAZ PDTC123JQAZ Hersteller : Nexperia PDTC143X_123J_143Z_114YQA_SER-1544539.pdf Bipolar Transistors - Pre-Biased PDTC123JQA/SOT1215/DFN1010D-3
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