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PDTC123JQCZ

PDTC123JQCZ Nexperia

pdtc143x_to_124xqc_ser.pdf Hersteller: Nexperia
Trans Digital BJT NPN 50V 100mA 450mW 3-Pin DFN-D T/R
auf Bestellung 29750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2198+0.071 EUR
2218+ 0.068 EUR
2632+ 0.055 EUR
2866+ 0.049 EUR
3135+ 0.043 EUR
6000+ 0.037 EUR
15000+ 0.032 EUR
Mindestbestellmenge: 2198
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Produktbewertung abgeben

Technische Details PDTC123JQCZ Nexperia

Description: PDTC123JQC/SOT8009/DFN1412D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Supplier Device Package: DFN1412D-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 360 mW, Frequency - Transition: 230 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.

Weitere Produktangebote PDTC123JQCZ nach Preis ab 0.039 EUR bis 0.65 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PDTC123JQCZ PDTC123JQCZ Hersteller : Nexperia USA Inc. PDTC143X_TO_124XQC_SER.pdf Description: PDTC123JQC/SOT8009/DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.1 EUR
Mindestbestellmenge: 5000
PDTC123JQCZ PDTC123JQCZ Hersteller : Nexperia pdtc143x_to_124xqc_ser.pdf Trans Digital BJT NPN 50V 100mA 450mW 3-Pin DFN-D T/R
auf Bestellung 29750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
727+0.22 EUR
1134+ 0.13 EUR
1157+ 0.12 EUR
2198+ 0.061 EUR
2218+ 0.058 EUR
2632+ 0.047 EUR
2866+ 0.043 EUR
3135+ 0.039 EUR
Mindestbestellmenge: 727
PDTC123JQCZ PDTC123JQCZ Hersteller : Nexperia USA Inc. PDTC143X_TO_124XQC_SER.pdf Description: PDTC123JQC/SOT8009/DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
40+0.65 EUR
60+ 0.44 EUR
122+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 40
PDTC123JQCZ PDTC123JQCZ Hersteller : Nexperia PDTC143X_TO_124XQC_SER-2721706.pdf Bipolar Transistors - Pre-Biased PDTC123JQC/SOT8009/DFN1412D-3
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