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PDTC144WMB,315

PDTC144WMB,315 NXP USA Inc.


PHGLS24966-1.pdf?t.download=true&u=5oefqw Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1006B-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 150000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11181+0.072 EUR
Mindestbestellmenge: 11181
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Technische Details PDTC144WMB,315 NXP USA Inc.

Description: TRANS PREBIAS NPN 50V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V, Supplier Device Package: DFN1006B-3, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 230 MHz, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 22 kOhms, Qualification: AEC-Q100.

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PDTC144WMB,315 PDTC144WMB,315 Hersteller : NEXPERIA 1513321732423306pdtc144wmb.pdf Trans Digital BJT NPN 50V 100mA 250mW Automotive 3-Pin DFN-B T/R
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PDTC144WMB,315 PDTC144WMB,315 Hersteller : Nexperia USA Inc. PDTC144WMB.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1006B-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q100
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PDTC144WMB,315 PDTC144WMB,315 Hersteller : Nexperia PDTC144WMB-2938360.pdf Digital Transistors PDTC144WMB/SOT883B/XQFN3
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