auf Bestellung 4948 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
59+ | 0.89 EUR |
85+ | 0.62 EUR |
133+ | 0.39 EUR |
1000+ | 0.18 EUR |
5000+ | 0.14 EUR |
10000+ | 0.12 EUR |
25000+ | 0.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PDTD143EQAZ Nexperia
Description: TRANS PREBIAS NPN 50V 0.5A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V, Supplier Device Package: DFN1010D-3, Grade: Automotive, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 325 mW, Frequency - Transition: 210 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, Qualification: AEC-Q101.
Weitere Produktangebote PDTD143EQAZ
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
PDTD143EQAZ | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.5A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Supplier Device Package: DFN1010D-3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 325 mW Frequency - Transition: 210 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |