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PDTD143EQAZ

PDTD143EQAZ Nexperia


PDTD113_123_143_114EQA_SER-1539698.pdf Hersteller: Nexperia
Digital Transistors PDTD143EQA/SOT1215/DFN1010D-3
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Lieferzeit 14-28 Tag (e)
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59+0.89 EUR
85+ 0.62 EUR
133+ 0.39 EUR
1000+ 0.18 EUR
5000+ 0.14 EUR
10000+ 0.12 EUR
25000+ 0.11 EUR
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Technische Details PDTD143EQAZ Nexperia

Description: TRANS PREBIAS NPN 50V 0.5A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V, Supplier Device Package: DFN1010D-3, Grade: Automotive, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 325 mW, Frequency - Transition: 210 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, Qualification: AEC-Q101.

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PDTD143EQAZ PDTD143EQAZ Hersteller : Nexperia USA Inc. PDTD113_123_143_114EQA_SER.pdf Description: TRANS PREBIAS NPN 50V 0.5A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 325 mW
Frequency - Transition: 210 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
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