PDTD143ETVL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: TRANS PREBIAS NPN 50V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 225 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 34+ | 0.78 EUR |
| 49+ | 0.54 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.15 EUR |
| 2000+ | 0.13 EUR |
| 5000+ | 0.12 EUR |
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Technische Details PDTD143ETVL Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 320 mW, Frequency - Transition: 225 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms.
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Description: TRANS PREBIAS NPN 50V TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 320 mW Frequency - Transition: 225 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
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