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PEMB13,115

PEMB13,115 NEXPERIA


PEMB13_PUMB13.pdf Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 300mW
Case: SOT666
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
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Technische Details PEMB13,115 NEXPERIA

Description: TRANS PREBIAS 2PNP 50V SOT666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SOT-666.

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PEMB13,115 PEMB13,115 Hersteller : Nexperia USA Inc. PEMB13_PUMB13.pdf Description: TRANS PREBIAS 2PNP 50V SOT666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-666
Produkt ist nicht verfügbar
PEMB13,115 PEMB13,115 Hersteller : Nexperia PEMB13_PUMB13-2938150.pdf Digital Transistors NRND for Automotive Applications PEMB13/SOT666/SOT6
Produkt ist nicht verfügbar
PEMB13,115 PEMB13,115 Hersteller : NEXPERIA PEMB13_PUMB13.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 300mW
Case: SOT666
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Produkt ist nicht verfügbar