PEMB13,115 NEXPERIA
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 300mW
Case: SOT666
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 300mW
Case: SOT666
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details PEMB13,115 NEXPERIA
Description: TRANS PREBIAS 2PNP 50V SOT666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SOT-666.
Weitere Produktangebote PEMB13,115
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
PEMB13,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS 2PNP 50V SOT666 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-666 |
Produkt ist nicht verfügbar |
||
PEMB13,115 | Hersteller : Nexperia | Digital Transistors NRND for Automotive Applications PEMB13/SOT666/SOT6 |
Produkt ist nicht verfügbar |
||
PEMB13,115 | Hersteller : NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 300mW Case: SOT666 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Application: automotive industry |
Produkt ist nicht verfügbar |