PEMB3,115 NXP
Hersteller: NXP
Description: NXP - PEMB3,115 - SMALL SIGNAL DIODES
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: NXP - PEMB3,115 - SMALL SIGNAL DIODES
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 300000 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details PEMB3,115 NXP
Description: TRANS PREBIAS 2PNP 50V SOT666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: SOT-666.
Weitere Produktangebote PEMB3,115
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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PEMB3,115 | Hersteller : NEXPERIA | Trans Digital BJT PNP 50V 100mA 300mW Automotive 6-Pin SOT-666 T/R |
Produkt ist nicht verfügbar |
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PEMB3,115 | Hersteller : NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; 4.7kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 300mW Case: SOT666 Current gain: 200 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz Base resistor: 4.7kΩ Application: automotive industry |
Produkt ist nicht verfügbar |
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PEMB3,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS 2PNP 50V SOT666 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SOT-666 |
Produkt ist nicht verfügbar |
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PEMB3,115 | Hersteller : Nexperia | Digital Transistors NRND for Automotive Applications PEMB3/SOT666/SOT6 |
Produkt ist nicht verfügbar |
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PEMB3,115 | Hersteller : NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; 4.7kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 300mW Case: SOT666 Current gain: 200 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz Base resistor: 4.7kΩ Application: automotive industry |
Produkt ist nicht verfügbar |