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PEMT1,315

PEMT1,315 Nexperia

PEMT1-1320427.pdf Hersteller: Nexperia
Bipolar Transistors - BJT 40V 200mW 2xPNP gen purpose transist
auf Bestellung 1237 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
52+1.01 EUR
69+ 0.76 EUR
122+ 0.43 EUR
500+ 0.28 EUR
Mindestbestellmenge: 52
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Technische Details PEMT1,315 Nexperia

Description: TRANS 2PNP 40V 0.1A SOT666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-666.

Weitere Produktangebote PEMT1,315 nach Preis ab 0.24 EUR bis 1.09 EUR

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Preis ohne MwSt
PEMT1,315 PEMT1,315 Hersteller : Nexperia USA Inc. PEMT1.pdf Description: TRANS 2PNP 40V 0.1A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-666
auf Bestellung 7563 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
34+ 0.79 EUR
100+ 0.4 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
2000+ 0.24 EUR
Mindestbestellmenge: 24
PEMT1,315 PEMT1,315 Hersteller : Nexperia USA Inc. PEMT1.pdf Description: TRANS 2PNP 40V 0.1A SOT666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-666
auf Bestellung 7563 Stücke:
Lieferzeit 21-28 Tag (e)
PEMT1,315 Hersteller : NEXPERIA PEMT1.pdf PEMT1.315 PNP SMD transistors
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