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PHB191NQ06LT,118

PHB191NQ06LT,118 Nexperia USA Inc.

PHB191NQ06LT.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7665 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+3.91 EUR
1600+ 3.32 EUR
Mindestbestellmenge: 800
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Technische Details PHB191NQ06LT,118 Nexperia USA Inc.

Description: MOSFET N-CH 55V 75A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 95.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 7665 pF @ 25 V.

Weitere Produktangebote PHB191NQ06LT,118 nach Preis ab 3.04 EUR bis 6.99 EUR

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PHB191NQ06LT,118 PHB191NQ06LT,118 Hersteller : Nexperia PHB191NQ06LT-2938639.pdf MOSFET PHB191NQ06LT/SOT404/D2PAK
auf Bestellung 2408 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.84 EUR
10+ 5.69 EUR
100+ 4.52 EUR
250+ 4.32 EUR
500+ 4.13 EUR
800+ 3.15 EUR
2400+ 3.04 EUR
Mindestbestellmenge: 8
PHB191NQ06LT,118 PHB191NQ06LT,118 Hersteller : Nexperia USA Inc. PHB191NQ06LT.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7665 pF @ 25 V
auf Bestellung 2694 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.99 EUR
10+ 5.81 EUR
100+ 4.62 EUR
Mindestbestellmenge: 4
PHB191NQ06LT,118 PHB191NQ06LT,118 Hersteller : NEXPERIA 269117473679760phb191nq06lt.pdf Trans MOSFET N-CH 55V 75A 3-Pin(2+Tab) D2PAK T/R
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