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PHB20N06T,118

PHB20N06T,118 NEXPERIA


PHGLS19797-1.pdf?t.download=true&u=5oefqw Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 14.3A; Idm: 81A; 62W
Mounting: SMD
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 81A
Case: D2PAK; SOT404
Drain-source voltage: 55V
Drain current: 14.3A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 62W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 790 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
70+1.03 EUR
78+ 0.92 EUR
99+ 0.73 EUR
105+ 0.69 EUR
800+ 0.68 EUR
Mindestbestellmenge: 70
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Produktbewertung abgeben

Technische Details PHB20N06T,118 NEXPERIA

Description: MOSFET N-CH 55V 20.3A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 483 pF @ 25 V.

Weitere Produktangebote PHB20N06T,118 nach Preis ab 0.69 EUR bis 1.03 EUR

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PHB20N06T,118 PHB20N06T,118 Hersteller : NEXPERIA PHGLS19797-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 14.3A; Idm: 81A; 62W
Mounting: SMD
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 81A
Case: D2PAK; SOT404
Drain-source voltage: 55V
Drain current: 14.3A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 62W
Polarisation: unipolar
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
70+1.03 EUR
78+ 0.92 EUR
99+ 0.73 EUR
105+ 0.69 EUR
Mindestbestellmenge: 70
PHB20N06T,118 PHB20N06T,118 Hersteller : NEXPERIA 2152628438684666phb20n06t.pdf Trans MOSFET N-CH 55V 20.3A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
PHB20N06T,118 PHB20N06T,118 Hersteller : Nexperia USA Inc. PHGLS19797-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 20.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 483 pF @ 25 V
Produkt ist nicht verfügbar
PHB20N06T,118 PHB20N06T,118 Hersteller : Nexperia USA Inc. PHGLS19797-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 20.3A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 483 pF @ 25 V
Produkt ist nicht verfügbar
PHB20N06T,118 PHB20N06T,118 Hersteller : Nexperia PHB20N06T-2938500.pdf MOSFET RAIL MOSFET
Produkt ist nicht verfügbar