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PHB66NQ03LT,118

PHB66NQ03LT,118 Nexperia USA Inc.


PHB,PHD66NQ03LT.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 66A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
auf Bestellung 8543 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
689+1.14 EUR
Mindestbestellmenge: 689
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Produktbewertung abgeben

Technische Details PHB66NQ03LT,118 Nexperia USA Inc.

Description: MOSFET N-CH 25V 66A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V, Power Dissipation (Max): 93W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V.

Weitere Produktangebote PHB66NQ03LT,118 nach Preis ab 2.17 EUR bis 3.17 EUR

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Preis ohne MwSt
PHB66NQ03LT,118 PHB66NQ03LT,118 Hersteller : Nexperia PHB66NQ03LT-2938692.pdf MOSFET TAPE13 MOSFET
auf Bestellung 4408 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
17+3.17 EUR
19+ 2.86 EUR
100+ 2.22 EUR
500+ 2.17 EUR
Mindestbestellmenge: 17
PHB66NQ03LT,118 PHB66NQ03LT,118 Hersteller : NEXPERIA PH_66NQ03LT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 93W; D2PAK,SOT404
Drain-source voltage: 25V
Drain current: 45A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 93W
Polarisation: unipolar
Kind of package: reel; tape
Case: D2PAK; SOT404
Features of semiconductor devices: logic level
Gate charge: 3.6nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PHB66NQ03LT,118 PHB66NQ03LT,118 Hersteller : Nexperia USA Inc. PHB,PHD66NQ03LT.pdf Description: MOSFET N-CH 25V 66A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
PHB66NQ03LT,118 PHB66NQ03LT,118 Hersteller : Nexperia USA Inc. PHB,PHD66NQ03LT.pdf Description: MOSFET N-CH 25V 66A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
PHB66NQ03LT,118 Hersteller : NXP Semiconductors PHB,PHD66NQ03LT.pdf Description: PHB66NQ03LT - N-CHANNEL TRENCHMO
Packaging: Bulk
Produkt ist nicht verfügbar
PHB66NQ03LT,118 PHB66NQ03LT,118 Hersteller : NEXPERIA PH_66NQ03LT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 93W; D2PAK,SOT404
Drain-source voltage: 25V
Drain current: 45A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 93W
Polarisation: unipolar
Kind of package: reel; tape
Case: D2PAK; SOT404
Features of semiconductor devices: logic level
Gate charge: 3.6nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar