PHD38N02LT,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 20V 44.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44.7A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 25A, 5V
Power Dissipation (Max): 57.6W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
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Technische Details PHD38N02LT,118 Nexperia USA Inc.
Description: MOSFET N-CH 20V 44.7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44.7A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 25A, 5V, Power Dissipation (Max): 57.6W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: DPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 20 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20.
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PHD38N02LT,118 | Hersteller : Nexperia |
MOSFET TAPE13 MOSFET |
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