PHK04P02T,518 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: TRANSISTORS>100MHZ
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.66A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 600mV @ 1mA (Typ)
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 12.8 V
auf Bestellung 529713 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1244+ | 0.57 EUR |
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Technische Details PHK04P02T,518 Nexperia USA Inc.
Description: TRANSISTORS>100MHZ, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.66A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V, Power Dissipation (Max): 5W (Tc), Vgs(th) (Max) @ Id: 600mV @ 1mA (Typ), Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 16 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 12.8 V.
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