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PHK31NQ03LT,518

PHK31NQ03LT,518 NXP Semiconductors


PHGLS22917-1.pdf?t.download=true&u=5oefqw Hersteller: NXP Semiconductors
Description: NEXPERIA PHK31NQ03LT - 30.4A, 30
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.4A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 6.9W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4235 pF @ 12 V
auf Bestellung 88953 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
601+1.3 EUR
Mindestbestellmenge: 601
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Technische Details PHK31NQ03LT,518 NXP Semiconductors

Description: NEXPERIA PHK31NQ03LT - 30.4A, 30, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30.4A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V, Power Dissipation (Max): 6.9W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4235 pF @ 12 V.

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PHK31NQ03LT,518 PHK31NQ03LT,518 Hersteller : Nexperia PHK31NQ03LT-1320242.pdf MOSFET MOSFET N-CH 30V 30.4A
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