PHKD13N03LT,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET 2N-CH 30V 10.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.57W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.4A
Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
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Technische Details PHKD13N03LT,118 Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 10.4A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.57W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 10.4A, Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO.