PHKD6N02LT,518 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET 2N-CH 20V 10.9A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.17W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10.9A
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 5V
Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 966+ | 0.74 EUR |
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Technische Details PHKD6N02LT,518 Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 10.9A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.17W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 10.9A, Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V, Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 5V, Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SO.
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PHKD6N02LT,518 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 10.9A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.17W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.9A Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 5V Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SO |
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