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PHN203,518

PHN203,518 NEXPERIA


2124601094429397phn203.pdf Hersteller: NEXPERIA
Trans MOSFET N-CH 30V 6.3A 8-Pin SO T/R
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Technische Details PHN203,518 NEXPERIA

Description: MOSFET 2N-CH 30V 6.3A SOT96-1, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.3A, Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 20V, Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: 8-SO, Part Status: Obsolete.

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PHN203,518 PHN203,518 Hersteller : Nexperia USA Inc. PHN203.pdf Description: MOSFET 2N-CH 30V 6.3A SOT96-1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
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PHN203,518 PHN203,518 Hersteller : Nexperia PHN203-1320347.pdf MOSFET TAPE13 MOSFET
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