auf Bestellung 3957 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 3.69 EUR |
| 18+ | 2.96 EUR |
| 100+ | 2.42 EUR |
| 250+ | 2.33 EUR |
| 500+ | 2.04 EUR |
| 1000+ | 1.66 EUR |
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Technische Details PHP18NQ10T,127 Nexperia
Description: MOSFET N-CH 100V 18A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 25 V.
Weitere Produktangebote PHP18NQ10T,127
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PHP18NQ10T,127 | Hersteller : NEXPERIA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 72A; 79W Case: SOT78; TO220AB Mounting: THT Kind of package: tube Pulsed drain current: 72A Power dissipation: 79W Gate charge: 21nC Polarisation: unipolar Drain current: 13A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET On-state resistance: 243mΩ Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PHP18NQ10T,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 18A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 25 V |
Produkt ist nicht verfügbar |
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PHP18NQ10T,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 72A; 79W Case: SOT78; TO220AB Mounting: THT Kind of package: tube Pulsed drain current: 72A Power dissipation: 79W Gate charge: 21nC Polarisation: unipolar Drain current: 13A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET On-state resistance: 243mΩ Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |