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PMBFJ111,215

PMBFJ111,215 NXP Semiconductors


pmbfj111_112_113_3.pdf Hersteller: NXP Semiconductors
Trans JFET N-CH 40V 3-Pin TO-236AB T/R
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Technische Details PMBFJ111,215 NXP Semiconductors

Description: JFET N-CH 40V SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS), Voltage - Breakdown (V(BR)GSS): 40 V, Supplier Device Package: SOT-23 (TO-236AB), Part Status: Obsolete, Drain to Source Voltage (Vdss): 40 V, Power - Max: 300 mW, Resistance - RDS(On): 30 Ohms, Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 µA, Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V.

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PMBFJ111,215 PMBFJ111,215 Hersteller : NXP USA Inc. PMBFJ111_112_113.pdf Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 300 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
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