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PMBTA06-QR

PMBTA06-QR Nexperia


PMBTA06-Q.pdf Hersteller: Nexperia
Bipolar Transistors - BJT PMBTA06-Q/SOT23/TO-236AB
auf Bestellung 6045 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
113+0.46 EUR
159+ 0.33 EUR
254+ 0.21 EUR
1000+ 0.091 EUR
3000+ 0.07 EUR
9000+ 0.06 EUR
Mindestbestellmenge: 113
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Technische Details PMBTA06-QR Nexperia

Description: TRANS NPN 80V 0.5A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V, Frequency - Transition: 100MHz, Supplier Device Package: TO-236AB, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 250 mW, Grade: Automotive, Qualification: AEC-Q101.

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PMBTA06-QR PMBTA06-QR Hersteller : NEXPERIA pmbta06-q.pdf Trans GP BJT NPN 80V 0.5A 250mW Automotive 3-Pin SOT-23 T/R
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PMBTA06-QR PMBTA06-QR Hersteller : Nexperia pmbta06-q.pdf Trans GP BJT NPN 80V 0.5A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R
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PMBTA06-QR PMBTA06-QR Hersteller : NEXPERIA PMBTA06-Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 25 Stücke
Produkt ist nicht verfügbar
PMBTA06-QR PMBTA06-QR Hersteller : Nexperia USA Inc. PMBTA06-Q.pdf Description: TRANS NPN 80V 0.5A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PMBTA06-QR PMBTA06-QR Hersteller : NEXPERIA PMBTA06-Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar