PMCM4401VNEAZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 12V 4.7A 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V
auf Bestellung 108000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9000+ | 0.24 EUR |
| 63000+ | 0.23 EUR |
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Technische Details PMCM4401VNEAZ Nexperia USA Inc.
Description: MOSFET N-CH 12V 4.7A 4WLCSP, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V, Power Dissipation (Max): 400mW (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 4-WLCSP (0.78x0.78), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V.
Weitere Produktangebote PMCM4401VNEAZ nach Preis ab 0.24 EUR bis 1.04 EUR
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PMCM4401VNEAZ | Hersteller : Nexperia |
MOSFET PMCM4401VNE/NAX000/NONE |
auf Bestellung 21061 Stücke: Lieferzeit 14-28 Tag (e) |
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PMCM4401VNEAZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 12V 4.7A 4WLCSP Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V Power Dissipation (Max): 400mW (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-WLCSP (0.78x0.78) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V |
auf Bestellung 123704 Stücke: Lieferzeit 21-28 Tag (e) |
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| PMCM4401VNEAZ | Hersteller : NEXPERIA |
Description: NEXPERIA - PMCM4401VNEAZ - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 1233000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMCM4401VNEAZ | Hersteller : NEXPERIA |
Trans MOSFET N-CH 12V 4.7A 4-Pin WLCSP |
Produkt ist nicht verfügbar |
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| PMCM4401VNEAZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 12V; 3A; Idm: 19A; WLCSP4 Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 12V Drain current: 3A Pulsed drain current: 19A Case: WLCSP4 Gate-source voltage: ±8V On-state resistance: 57mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 9000 Stücke |
Produkt ist nicht verfügbar |
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| PMCM4401VNEAZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 12V; 3A; Idm: 19A; WLCSP4 Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 12V Drain current: 3A Pulsed drain current: 19A Case: WLCSP4 Gate-source voltage: ±8V On-state resistance: 57mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |