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PMCM4402UPEZ

PMCM4402UPEZ Nexperia USA Inc.


PMCM4402UPE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj)
Power Dissipation (Max): 400mW
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9000+0.23 EUR
Mindestbestellmenge: 9000
Produktrezensionen
Produktbewertung abgeben

Technische Details PMCM4402UPEZ Nexperia USA Inc.

Description: MOSFET P-CH 20V 4WLCSP, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj), Power Dissipation (Max): 400mW, Supplier Device Package: 4-WLCSP (0.78x0.78), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V.

Weitere Produktangebote PMCM4402UPEZ nach Preis ab 0.21 EUR bis 0.96 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PMCM4402UPEZ PMCM4402UPEZ Hersteller : Nexperia PMCM4402UPE-1319266.pdf MOSFET PMCM4402UPE/NAX000/NONE
auf Bestellung 46095 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
94+0.56 EUR
117+ 0.44 EUR
179+ 0.29 EUR
1000+ 0.22 EUR
9000+ 0.21 EUR
Mindestbestellmenge: 94
PMCM4402UPEZ PMCM4402UPEZ Hersteller : Nexperia USA Inc. PMCM4402UPE.pdf Description: MOSFET P-CH 20V 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj)
Power Dissipation (Max): 400mW
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
auf Bestellung 16310 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.96 EUR
35+ 0.75 EUR
100+ 0.45 EUR
500+ 0.42 EUR
1000+ 0.28 EUR
2000+ 0.26 EUR
Mindestbestellmenge: 28
PMCM4402UPEZ Hersteller : NEXPERIA PMCM4402UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.1A; Idm: -13A
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.1A
On-state resistance: 114mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 10nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -13A
Mounting: SMD
Case: WLCSP4
Anzahl je Verpackung: 9000 Stücke
Produkt ist nicht verfügbar
PMCM4402UPEZ Hersteller : NEXPERIA PMCM4402UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.1A; Idm: -13A
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.1A
On-state resistance: 114mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 10nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -13A
Mounting: SMD
Case: WLCSP4
Produkt ist nicht verfügbar