Produkte > NEXPERIA USA INC. > PMCM6501UNEZ
PMCM6501UNEZ

PMCM6501UNEZ Nexperia USA Inc.


PMCM6501UNE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 8.7A 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-WLCSP (1.48x0.98)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 10 V
auf Bestellung 4500 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4500+0.52 EUR
Mindestbestellmenge: 4500
Produktrezensionen
Produktbewertung abgeben

Technische Details PMCM6501UNEZ Nexperia USA Inc.

Description: MOSFET N-CH 20V 8.7A 6WLCSP, Packaging: Tape & Reel (TR), Package / Case: 6-XFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), Rds On (Max) @ Id, Vgs: 21mOhm @ 3A, 4.5V, Power Dissipation (Max): 400mW, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 6-WLCSP (1.48x0.98), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 10 V.

Weitere Produktangebote PMCM6501UNEZ nach Preis ab 0.52 EUR bis 1.38 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PMCM6501UNEZ PMCM6501UNEZ Hersteller : Nexperia USA Inc. PMCM6501UNE.pdf Description: MOSFET N-CH 20V 8.7A 6WLCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-WLCSP (1.48x0.98)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 10 V
auf Bestellung 4500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.38 EUR
22+ 1.19 EUR
100+ 0.82 EUR
500+ 0.69 EUR
1000+ 0.59 EUR
2000+ 0.52 EUR
Mindestbestellmenge: 19
PMCM6501UNEZ PMCM6501UNEZ Hersteller : NEXPERIA PMCM6501UNE.pdf Description: NEXPERIA - PMCM6501UNEZ - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 320790 Stücke:
Lieferzeit 14-21 Tag (e)
PMCM6501UNEZ PMCM6501UNEZ Hersteller : Nexperia PMCM6501UNE-1318755.pdf MOSFET PMCM6501UNE/NAX000/NONE
Produkt ist nicht verfügbar