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PMCM6501UPEZ

PMCM6501UPEZ Nexperia USA Inc.


PMCM6501UPE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tj)
Power Dissipation (Max): 556mW
Supplier Device Package: 6-WLCSP (1.48x0.98)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 4.5 V
auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4500+0.52 EUR
9000+ 0.46 EUR
Mindestbestellmenge: 4500
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Technische Details PMCM6501UPEZ Nexperia USA Inc.

Description: MOSFET P-CH 20V 6WLCSP, Packaging: Tape & Reel (TR), Package / Case: 6-XFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tj), Power Dissipation (Max): 556mW, Supplier Device Package: 6-WLCSP (1.48x0.98), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 4.5 V.

Weitere Produktangebote PMCM6501UPEZ nach Preis ab 0.51 EUR bis 1.38 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PMCM6501UPEZ PMCM6501UPEZ Hersteller : Nexperia PMCM6501UPE-1319164.pdf MOSFET PMCM6501UPE/NAX000/NONE
auf Bestellung 7062 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
42+1.26 EUR
48+ 1.09 EUR
100+ 0.78 EUR
500+ 0.67 EUR
1000+ 0.53 EUR
4500+ 0.51 EUR
Mindestbestellmenge: 42
PMCM6501UPEZ PMCM6501UPEZ Hersteller : Nexperia USA Inc. PMCM6501UPE.pdf Description: MOSFET P-CH 20V 6WLCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tj)
Power Dissipation (Max): 556mW
Supplier Device Package: 6-WLCSP (1.48x0.98)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 4.5 V
auf Bestellung 12278 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.38 EUR
22+ 1.19 EUR
100+ 0.82 EUR
500+ 0.69 EUR
1000+ 0.59 EUR
2000+ 0.52 EUR
Mindestbestellmenge: 19
PMCM6501UPEZ Hersteller : NEXPERIA PMCM6501UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.5A; Idm: -22A
Drain-source voltage: -20V
Drain current: -3.5A
Case: WLCSP6
Polarisation: unipolar
On-state resistance: 43mΩ
Pulsed drain current: -22A
Technology: Trench
Kind of channel: enhanced
Gate charge: 29nC
Gate-source voltage: ±8V
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Mounting: SMD
Type of transistor: P-MOSFET
Anzahl je Verpackung: 4500 Stücke
Produkt ist nicht verfügbar
PMCM6501UPEZ PMCM6501UPEZ Hersteller : NEXPERIA pmcm6501upe.pdf Trans MOSFET P-CH 20V 5.6A 6-Pin WLCSP T/R
Produkt ist nicht verfügbar
PMCM6501UPEZ Hersteller : NEXPERIA PMCM6501UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.5A; Idm: -22A
Drain-source voltage: -20V
Drain current: -3.5A
Case: WLCSP6
Polarisation: unipolar
On-state resistance: 43mΩ
Pulsed drain current: -22A
Technology: Trench
Kind of channel: enhanced
Gate charge: 29nC
Gate-source voltage: ±8V
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Mounting: SMD
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar