PMCM6501VPEZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET P-CH 12V 6.2A 6WLCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 4.5V
Power Dissipation (Max): 556mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-WLCSP (1.48x0.98)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 29.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
auf Bestellung 4495 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 19+ | 1.38 EUR |
| 22+ | 1.19 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.59 EUR |
| 2000+ | 0.52 EUR |
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Technische Details PMCM6501VPEZ Nexperia USA Inc.
Description: MOSFET P-CH 12V 6.2A 6WLCSP, Packaging: Tape & Reel (TR), Package / Case: 6-XFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 4.5V, Power Dissipation (Max): 556mW (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 6-WLCSP (1.48x0.98), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 29.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V.
Weitere Produktangebote PMCM6501VPEZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| PMCM6501VPEZ | Hersteller : NEXPERIA |
Description: NEXPERIA - PMCM6501VPEZ - INTEGRATED PASSIVE FILTERS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 202485 Stücke: Lieferzeit 14-21 Tag (e) |
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| PMCM6501VPEZ | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -4A; Idm: -25A; WLCSP6 Drain-source voltage: -12V Drain current: -4A Case: WLCSP6 Polarisation: unipolar On-state resistance: 34mΩ Pulsed drain current: -25A Technology: Trench Kind of channel: enhanced Gate charge: 29.4nC Gate-source voltage: ±8V Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Mounting: SMD Type of transistor: P-MOSFET Anzahl je Verpackung: 4500 Stücke |
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PMCM6501VPEZ | Hersteller : NEXPERIA |
Trans MOSFET P-CH 12V 6.2A 6-Pin WLCSP T/R |
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| PMCM6501VPEZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 12V 6.2A 6WLCSP Packaging: Tape & Reel (TR) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 4.5V Power Dissipation (Max): 556mW (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-WLCSP (1.48x0.98) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 29.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V |
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PMCM6501VPEZ | Hersteller : Nexperia |
MOSFET PMCM6501VPE/NAX000/NONE |
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| PMCM6501VPEZ | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -4A; Idm: -25A; WLCSP6 Drain-source voltage: -12V Drain current: -4A Case: WLCSP6 Polarisation: unipolar On-state resistance: 34mΩ Pulsed drain current: -25A Technology: Trench Kind of channel: enhanced Gate charge: 29.4nC Gate-source voltage: ±8V Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Mounting: SMD Type of transistor: P-MOSFET |
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