PMCXB900UEZ NXP Semiconductors
Hersteller: NXP SemiconductorsDescription: MOSFET N/P-CH 20V 0.6A 6DFN
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 265mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
auf Bestellung 1684401 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3557+ | 0.19 EUR |
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Technische Details PMCXB900UEZ NXP Semiconductors
Description: MOSFET N/P-CH 20V 0.6A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 265mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA, Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V, Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN1010B-6.
Weitere Produktangebote PMCXB900UEZ nach Preis ab 0.2 EUR bis 0.92 EUR
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PMCXB900UEZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N/P-CH 20V 0.6A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 265mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1010B-6 |
auf Bestellung 105000 Stücke: Lieferzeit 21-28 Tag (e) |
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PMCXB900UEZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N/P-CH 20V 0.6A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 265mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1010B-6 |
auf Bestellung 109037 Stücke: Lieferzeit 21-28 Tag (e) |
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PMCXB900UEZ | Hersteller : Nexperia |
MOSFET PMCXB900UE/SOT1216/DFN1010B-6 |
auf Bestellung 11099 Stücke: Lieferzeit 14-28 Tag (e) |
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| PMCXB900UEZ | Hersteller : NEXPERIA |
Description: NEXPERIA - PMCXB900UEZ - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 1684401 Stücke: Lieferzeit 14-21 Tag (e) |
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PMCXB900UEZ | Hersteller : NEXPERIA |
Trans MOSFET N/P-CH 20V 0.6A/0.5A 6-Pin DFN-B EP T/R |
Produkt ist nicht verfügbar |
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| PMCXB900UEZ | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 400/-300mA Pulsed drain current: -2...2.5A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8/±8V On-state resistance: 1/2.1Ω Mounting: SMD Gate charge: 700pC/2.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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| PMCXB900UEZ | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 400/-300mA Pulsed drain current: -2...2.5A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8/±8V On-state resistance: 1/2.1Ω Mounting: SMD Gate charge: 700pC/2.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |