auf Bestellung 9069 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 62+ | 0.85 EUR |
| 72+ | 0.73 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.4 EUR |
| 3000+ | 0.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMDPB55XP,115 Nexperia
Description: NEXPERIA - PMDPB55XP,115 - Dual-MOSFET, p-Kanal, 20 V, 20 V, 4.5 A, 4.5 A, 0.055 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 4.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 20V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 4.5A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.055ohm, Verlustleistung, p-Kanal: 490mW, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Bauform - Transistor: SOT-1118, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.055ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Verlustleistung, n-Kanal: 490mW, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote PMDPB55XP,115 nach Preis ab 0.43 EUR bis 1.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PMDPB55XP,115 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET 2P-CH 20V 3.4A 6HUSONPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 490mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.4A Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
auf Bestellung 1754 Stücke: Lieferzeit 21-28 Tag (e) |
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PMDPB55XP,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - PMDPB55XP,115 - Dual-MOSFET, p-Kanal, 20 V, 20 V, 4.5 A, 4.5 A, 0.055 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 4.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 4.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.055ohm Verlustleistung, p-Kanal: 490mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-1118 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.055ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 490mW Betriebstemperatur, max.: 150°C |
auf Bestellung 7925 Stücke: Lieferzeit 14-21 Tag (e) |
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| PMDPB55XP,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.2A; Idm: -14A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -14A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 99mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMDPB55XP,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2P-CH 20V 3.4A 6HUSON Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 490mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.4A Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
Produkt ist nicht verfügbar |
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| PMDPB55XP,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.2A; Idm: -14A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -14A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 99mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |