PMDPB56XNEAX Nexperia
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.19 EUR |
| 6000+ | 0.18 EUR |
| 9000+ | 0.17 EUR |
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Technische Details PMDPB56XNEAX Nexperia
Description: MOSFET 2N-CH 30V 3.1A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 485mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 15V, Rds On (Max) @ Id, Vgs: 72mOhm @ 3.1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: DFN2020D-6, Part Status: Active, Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote PMDPB56XNEAX nach Preis ab 0.18 EUR bis 1.09 EUR
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PMDPB56XNEAX | Hersteller : Nexperia |
 Trans MOSFET N-CH 30V 3.1A Automotive AEC-Q101 6-Pin DFN-D EP T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDPB56XNEAX | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 3.1A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 485mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 15V Rds On (Max) @ Id, Vgs: 72mOhm @ 3.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: DFN2020D-6 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 39000 Stücke: Lieferzeit 21-28 Tag (e) |
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PMDPB56XNEAX | Hersteller : Nexperia |
MOSFET PMDPB56XNEA/SOT1118/HUSON6 |
auf Bestellung 81197 Stücke: Lieferzeit 14-28 Tag (e) |
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PMDPB56XNEAX | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 3.1A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 485mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 15V Rds On (Max) @ Id, Vgs: 72mOhm @ 3.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: DFN2020D-6 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 45863 Stücke: Lieferzeit 21-28 Tag (e) |
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PMDPB56XNEAX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 3.1A Automotive 6-Pin DFN-D EP T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDPB56XNEAX | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 3.1A Automotive AEC-Q101 6-Pin DFN-D EP T/R |
Produkt ist nicht verfügbar |
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PMDPB56XNEAX | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 3.1A Automotive AEC-Q101 6-Pin DFN-D EP T/R |
Produkt ist nicht verfügbar |
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| PMDPB56XNEAX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 2A; Idm: 12A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 12A Case: DFN2020D-6; SOT1118D Gate-source voltage: ±12V On-state resistance: 121mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMDPB56XNEAX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 2A; Idm: 12A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 12A Case: DFN2020D-6; SOT1118D Gate-source voltage: ±12V On-state resistance: 121mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |