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PMDPB58UPE,115

PMDPB58UPE,115 Nexperia USA Inc.


PMDPB58UPE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 3.6A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 515mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
auf Bestellung 12000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.33 EUR
6000+ 0.32 EUR
9000+ 0.29 EUR
Mindestbestellmenge: 3000
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Technische Details PMDPB58UPE,115 Nexperia USA Inc.

Description: MOSFET 2P-CH 20V 3.6A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 515mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.6A, Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V, Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: 6-HUSON (2x2).

Weitere Produktangebote PMDPB58UPE,115 nach Preis ab 0.3 EUR bis 1.02 EUR

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PMDPB58UPE,115 PMDPB58UPE,115 Hersteller : Nexperia USA Inc. PMDPB58UPE.pdf Description: MOSFET 2P-CH 20V 3.6A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 515mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
auf Bestellung 17912 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
27+0.99 EUR
31+ 0.85 EUR
100+ 0.59 EUR
500+ 0.46 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 27
PMDPB58UPE,115 PMDPB58UPE,115 Hersteller : Nexperia PMDPB58UPE-2938507.pdf MOSFET PMDPB58UPE/SOT1118/HUSON6
auf Bestellung 31159 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
52+1.02 EUR
61+ 0.87 EUR
100+ 0.65 EUR
500+ 0.51 EUR
1000+ 0.4 EUR
3000+ 0.32 EUR
9000+ 0.3 EUR
Mindestbestellmenge: 52
PMDPB58UPE,115 PMDPB58UPE,115 Hersteller : NEXPERIA 599214780812418pmdpb58upe.pdf Trans MOSFET P-CH 20V 4.5A 6-Pin HUSON EP T/R
Produkt ist nicht verfügbar
PMDPB58UPE,115 Hersteller : NEXPERIA PMDPB58UPE.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.3A; Idm: -14.4A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -14.4A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMDPB58UPE,115 Hersteller : NEXPERIA PMDPB58UPE.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.3A; Idm: -14.4A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -14.4A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar