PMDPB95XNE,115 NXP USA Inc.
Hersteller: NXP USA Inc.Description: MOSFET 2N-CH 30V 2.4A 6HUSON
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 475mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 15V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
auf Bestellung 312000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4438+ | 0.17 EUR |
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Technische Details PMDPB95XNE,115 NXP USA Inc.
Description: MOSFET 2N-CH 30V 2.4A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 475mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.4A, Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 15V, Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-HUSON (2x2).
Weitere Produktangebote PMDPB95XNE,115
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| PMDPB95XNE,115 | Hersteller : NXP |
Description: NXP - PMDPB95XNE,115 - INTEGRATED PASSIVE FILTERS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 309000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDPB95XNE,115 | Hersteller : NXP USA Inc. |
Description: MOSFET 2N-CH 30V 2.4A 6HUSON Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 475mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.4A Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 15V Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-HUSON (2x2) |
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