Technische Details PMDT290UCEH Nexperia
Description: MOSFET N/P-CH 20V 0.8A SOT666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 330mW (Ta), 1.09W (Tc), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 550mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V, 87pF @ 10V, Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V, 850mOhm @ 400mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V, 1.14nC @ 4.5V, Vgs(th) (Max) @ Id: 950mV @ 250µA, 1.3V @ 250µA, Supplier Device Package: SOT-666, Part Status: Not For New Designs, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PMDT290UCEH
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PMDT290UCEH | Hersteller : Nexperia |
 Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R |
Produkt ist nicht verfügbar |
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PMDT290UCEH | Hersteller : NEXPERIA |
Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R |
Produkt ist nicht verfügbar |
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| PMDT290UCEH | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 500/-350mA Pulsed drain current: -2.2...3.2A Power dissipation: 0.5W Case: SOT666 Gate-source voltage: ±8/±8V On-state resistance: 610mΩ/1.4Ω Mounting: SMD Gate charge: 0.68/1.14nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke |
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PMDT290UCEH | Hersteller : Nexperia USA Inc. |
Description: MOSFET N/P-CH 20V 0.8A SOT666 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 330mW (Ta), 1.09W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 550mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V, 87pF @ 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V, 850mOhm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V, 1.14nC @ 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA, 1.3V @ 250µA Supplier Device Package: SOT-666 Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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PMDT290UCEH | Hersteller : Nexperia |
MOSFET NRND for Automotive Applications PMDT290UCE/SOT666/SOT6 |
Produkt ist nicht verfügbar |
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| PMDT290UCEH | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 500/-350mA Pulsed drain current: -2.2...3.2A Power dissipation: 0.5W Case: SOT666 Gate-source voltage: ±8/±8V On-state resistance: 610mΩ/1.4Ω Mounting: SMD Gate charge: 0.68/1.14nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |