auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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4000+ | 0.15 EUR |
8000+ | 0.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMDT290UNE,115 Nexperia
Description: MOSFET 2N-CH 20V 0.8A SOT666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 800mA, Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V, Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-666, Grade: Automotive, Part Status: Not For New Designs, Qualification: AEC-Q101.
Weitere Produktangebote PMDT290UNE,115 nach Preis ab 0.083 EUR bis 1.35 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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PMDT290UNE,115 | Hersteller : Nexperia | Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDT290UNE,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 0.8A SOT666 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-666 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 |
auf Bestellung 148000 Stücke: Lieferzeit 21-28 Tag (e) |
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PMDT290UNE,115 | Hersteller : Nexperia | Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R |
auf Bestellung 32000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDT290UNE,115 | Hersteller : Nexperia | Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R |
auf Bestellung 32000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDT290UNE,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 0.8A SOT666 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-666 Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 153796 Stücke: Lieferzeit 21-28 Tag (e) |
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PMDT290UNE,115 | Hersteller : Nexperia | MOSFET NRND for Automotive Applications PMDT290UNE/SOT666/SOT6 |
auf Bestellung 230249 Stücke: Lieferzeit 379-393 Tag (e) |
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PMDT290UNE,115 | Hersteller : Nexperia | Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDT290UNE,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - PMDT290UNE,115 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 800 mA, 800 mA, 0.29 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 800mA hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 800mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.29ohm Verlustleistung, p-Kanal: 500mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Anzahl der Pins: 6Pins Drain-Source-Durchgangswiderstand, n-Kanal: 0.29ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 500mW Betriebstemperatur, max.: 150°C |
auf Bestellung 3910 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDT290UNE,115 | Hersteller : NEXPERIA | Trans MOSFET N-CH 20V 0.8A Automotive 6-Pin SOT-666 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDT290UNE,115 | Hersteller : Nexperia | Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R |
Produkt ist nicht verfügbar |
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PMDT290UNE,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 500mA; Idm: 3.2A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.5A Pulsed drain current: 3.2A Power dissipation: 0.5W Case: SOT666 Gate-source voltage: ±8V On-state resistance: 610mΩ Mounting: SMD Gate charge: 0.68nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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PMDT290UNE,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 500mA; Idm: 3.2A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.5A Pulsed drain current: 3.2A Power dissipation: 0.5W Case: SOT666 Gate-source voltage: ±8V On-state resistance: 610mΩ Mounting: SMD Gate charge: 0.68nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |