PMDXB550UNEZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET 2N-CH 30V 0.59A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 590mA
Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.25 EUR |
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Technische Details PMDXB550UNEZ Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.59A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 285mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 590mA, Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN1010B-6, Part Status: Active.
Weitere Produktangebote PMDXB550UNEZ nach Preis ab 0.22 EUR bis 0.97 EUR
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PMDXB550UNEZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 0.59A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 285mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 590mA Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1010B-6 Part Status: Active |
auf Bestellung 17208 Stücke: Lieferzeit 21-28 Tag (e) |
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PMDXB550UNEZ | Hersteller : Nexperia |
MOSFET PMDXB550UNE/SOT1216/DFN1010B-6 |
auf Bestellung 8007 Stücke: Lieferzeit 14-28 Tag (e) |
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| PMDXB550UNEZ | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 370mA; Idm: 2.3A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.37A Pulsed drain current: 2.3A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8V On-state resistance: 1.17Ω Mounting: SMD Gate charge: 1.05nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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| PMDXB550UNEZ | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 370mA; Idm: 2.3A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.37A Pulsed drain current: 2.3A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8V On-state resistance: 1.17Ω Mounting: SMD Gate charge: 1.05nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |