PMEG120G10ELRX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: DIODE SIGE 120V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 36pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Description: DIODE SIGE 120V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 36pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 23+ | 1.14 EUR |
| 33+ | 0.8 EUR |
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Technische Details PMEG120G10ELRX Nexperia USA Inc.
Description: DIODE SIGE 120V 1A SOD123W, Packaging: Tape & Reel (TR), Package / Case: SOD-123W, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 12 ns, Technology: SiGe (Silicon Germanium), Capacitance @ Vr, F: 36pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-123W, Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 120 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A, Current - Reverse Leakage @ Vr: 30 nA @ 120 V.
Weitere Produktangebote PMEG120G10ELRX nach Preis ab 0.21 EUR bis 1.14 EUR
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PMEG120G10ELRX | Hersteller : Nexperia |
 Rectifiers PMEG120G10ELR/SOD123W/SOD2 |
auf Bestellung 19876 Stücke: Lieferzeit 14-28 Tag (e) |
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PMEG120G10ELRX | Hersteller : NEXPERIA |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 120V; 1A; 12ns; SOD123W; Ufmax: 0.77V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 120V Load current: 1A Reverse recovery time: 12ns Semiconductor structure: single diode Features of semiconductor devices: silicon germanium diode (SiGe) Case: SOD123W Max. forward voltage: 0.77V Max. forward impulse current: 50A Leakage current: 30nA Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMEG120G10ELRX | Hersteller : Nexperia USA Inc. |
Description: DIODE SIGE 120V 1A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 36pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A Current - Reverse Leakage @ Vr: 30 nA @ 120 V |
Produkt ist nicht verfügbar |
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PMEG120G10ELRX | Hersteller : NEXPERIA |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 120V; 1A; 12ns; SOD123W; Ufmax: 0.77V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 120V Load current: 1A Reverse recovery time: 12ns Semiconductor structure: single diode Features of semiconductor devices: silicon germanium diode (SiGe) Case: SOD123W Max. forward voltage: 0.77V Max. forward impulse current: 50A Leakage current: 30nA Kind of package: reel; tape |
Produkt ist nicht verfügbar |