PMEG200G10ELRX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PMEG200G10ELR/SOD123W/SOD2
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 29pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 200 V
Description: PMEG200G10ELR/SOD123W/SOD2
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 29pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 200 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.24 EUR |
6000+ | 0.23 EUR |
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Technische Details PMEG200G10ELRX Nexperia USA Inc.
Description: PMEG200G10ELR/SOD123W/SOD2, Packaging: Tape & Reel (TR), Package / Case: SOD-123W, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 34 ns, Technology: SiGe (Silicon Germanium), Capacitance @ Vr, F: 29pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-123W, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 1 A, Current - Reverse Leakage @ Vr: 30 nA @ 200 V.
Weitere Produktangebote PMEG200G10ELRX nach Preis ab 0.15 EUR bis 0.89 EUR
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PMEG200G10ELRX | Hersteller : NEXPERIA |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 34ns; SOD123W; Ufmax: 0.805V Mounting: SMD Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: silicon germanium diode (SiGe) Case: SOD123W Max. off-state voltage: 200V Max. forward voltage: 0.805V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 34ns Max. forward impulse current: 40A Leakage current: 30nA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1640 Stücke: Lieferzeit 7-14 Tag (e) |
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PMEG200G10ELRX | Hersteller : NEXPERIA |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 34ns; SOD123W; Ufmax: 0.805V Mounting: SMD Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: silicon germanium diode (SiGe) Case: SOD123W Max. off-state voltage: 200V Max. forward voltage: 0.805V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 34ns Max. forward impulse current: 40A Leakage current: 30nA |
auf Bestellung 1640 Stücke: Lieferzeit 14-21 Tag (e) |
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PMEG200G10ELRX | Hersteller : Nexperia USA Inc. |
Description: PMEG200G10ELR/SOD123W/SOD2 Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 34 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 29pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 1 A Current - Reverse Leakage @ Vr: 30 nA @ 200 V |
auf Bestellung 9989 Stücke: Lieferzeit 21-28 Tag (e) |
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PMEG200G10ELRX | Hersteller : Nexperia | Rectifiers PMEG200G10ELR/SOD123W/SOD2 |
auf Bestellung 2595 Stücke: Lieferzeit 14-28 Tag (e) |
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