Produkte > NEXPERIA USA INC. > PMEG3010ESBCYL
PMEG3010ESBCYL

PMEG3010ESBCYL Nexperia USA Inc.


PMEG3010ESB.pdf Hersteller: Nexperia USA Inc.
Description: PMEG3010ESB - 30V, 1A LOW VF MEG
Packaging: Bulk
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.2 ns
Technology: Schottky
Capacitance @ Vr, F: 32pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 565 mV @ 1 A
Current - Reverse Leakage @ Vr: 45 µA @ 30 V
auf Bestellung 18888 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8876+0.047 EUR
Mindestbestellmenge: 8876
Produktrezensionen
Produktbewertung abgeben

Technische Details PMEG3010ESBCYL Nexperia USA Inc.

Description: PMEG3010ESB - 30V, 1A LOW VF MEG, Packaging: Bulk, Package / Case: 2-XDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 3.2 ns, Technology: Schottky, Capacitance @ Vr, F: 32pF @ 10V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DSN1006-2, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 565 mV @ 1 A, Current - Reverse Leakage @ Vr: 45 µA @ 30 V.