Technische Details PMEG3010ESBZ NEXPERIA
Description: DIODE SCHOTTKY 30V 1A DSN1006-2, Packaging: Tape & Reel (TR), Package / Case: 2-XDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 3.2 ns, Technology: Schottky, Capacitance @ Vr, F: 32pF @ 10V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DSN1006-2, Operating Temperature - Junction: 150°C (Max), Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 565 mV @ 1 A, Current - Reverse Leakage @ Vr: 45 µA @ 30 V.
Weitere Produktangebote PMEG3010ESBZ
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PMEG3010ESBZ | Hersteller : Nexperia USA Inc. |
 Description: DIODE SCHOTTKY 30V 1A DSN1006-2Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.2 ns Technology: Schottky Capacitance @ Vr, F: 32pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DSN1006-2 Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 565 mV @ 1 A Current - Reverse Leakage @ Vr: 45 µA @ 30 V |
Produkt ist nicht verfügbar |
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| PMEG3010ESBZ | Hersteller : Nexperia |
Schottky Diodes & Rectifiers PMEG3010ESB/DSN1006-2/REEL 7 |
Produkt ist nicht verfügbar |