Technische Details PMF370XN,115 Nexperia
Description: MOSFET N-CH 30V 870MA SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 870mA (Tc), Rds On (Max) @ Id, Vgs: 440mOhm @ 200mA, 4.5V, Power Dissipation (Max): 560mW (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-323, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 25 V.
Weitere Produktangebote PMF370XN,115
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PMF370XN,115 | Hersteller : NEXPERIA |
 Trans MOSFET N-CH 30V 0.87A 3-Pin SC-70 T/R |
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PMF370XN,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 870MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 870mA (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 200mA, 4.5V Power Dissipation (Max): 560mW (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 25 V |
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PMF370XN,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 870MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 870mA (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 200mA, 4.5V Power Dissipation (Max): 560mW (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 25 V |
Produkt ist nicht verfügbar |