PMGD130UN,115 NXP USA Inc.
Hersteller: NXP USA Inc.Description: MOSFET 2N-CH 20V 1.2A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSSOP
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Technische Details PMGD130UN,115 NXP USA Inc.
Description: MOSFET 2N-CH 20V 1.2A 6TSSOP, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 390mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.2A, Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V, Rds On (Max) @ Id, Vgs: 145mOhm @ 1.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-TSSOP.