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PMH1200UPEH

PMH1200UPEH Nexperia USA Inc.

PMH1200UPE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 520MA DFN0606-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 520mA (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 410mA, 4.5V
Power Dissipation (Max): 380mW (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10000+0.12 EUR
30000+ 0.11 EUR
Mindestbestellmenge: 10000
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Technische Details PMH1200UPEH Nexperia USA Inc.

Description: MOSFET P-CH 30V 520MA DFN0606-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 520mA (Tc), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 410mA, 4.5V, Power Dissipation (Max): 380mW (Ta), 2.8W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN0606-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 15 V.

Weitere Produktangebote PMH1200UPEH nach Preis ab 0.14 EUR bis 0.86 EUR

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Preis ohne MwSt
PMH1200UPEH PMH1200UPEH Hersteller : Nexperia USA Inc. PMH1200UPE.pdf Description: MOSFET P-CH 30V 520MA DFN0606-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 520mA (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 410mA, 4.5V
Power Dissipation (Max): 380mW (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 15 V
auf Bestellung 35608 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
33+0.81 EUR
43+ 0.61 EUR
49+ 0.53 EUR
100+ 0.35 EUR
250+ 0.29 EUR
500+ 0.23 EUR
1000+ 0.18 EUR
2500+ 0.15 EUR
5000+ 0.14 EUR
Mindestbestellmenge: 33
PMH1200UPEH PMH1200UPEH Hersteller : Nexperia PMH1200UPE-1545558.pdf MOSFET PMH1200UPE/SOT8001/DFN0606-3
auf Bestellung 18598 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
61+0.86 EUR
98+ 0.53 EUR
170+ 0.31 EUR
500+ 0.24 EUR
1000+ 0.19 EUR
2500+ 0.16 EUR
5000+ 0.15 EUR
Mindestbestellmenge: 61
PMH1200UPEH PMH1200UPEH Hersteller : NEXPERIA pmh1200upe.pdf 30 V, P-channel Trench MOSFET
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