PMH400UNEH Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 30V 900MA DFN0606-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 700mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.23W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMH400UNEH Nexperia USA Inc.
Description: MOSFET N-CH 30V 900MA DFN0606-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), Rds On (Max) @ Id, Vgs: 460mOhm @ 700mA, 4.5V, Power Dissipation (Max): 360mW (Ta), 2.23W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN0606-3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 15 V.
Weitere Produktangebote PMH400UNEH nach Preis ab 0.11 EUR bis 0.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
PMH400UNEH | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 900MA DFN0606-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 700mA, 4.5V Power Dissipation (Max): 360mW (Ta), 2.23W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 15 V |
auf Bestellung 19606 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
PMH400UNEH | Hersteller : Nexperia |
MOSFET PMH400UNE/SOT8001/DFN0606-3 |
auf Bestellung 7170 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
| PMH400UNEH | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
| PMH400UNEH | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 570mA; Idm: 3A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 570mA Pulsed drain current: 3A Case: DFN0606-3; SOT8001 Gate-source voltage: ±8V On-state resistance: 825mΩ Mounting: SMD Gate charge: 930pC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| PMH400UNEH | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 570mA; Idm: 3A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 570mA Pulsed drain current: 3A Case: DFN0606-3; SOT8001 Gate-source voltage: ±8V On-state resistance: 825mΩ Mounting: SMD Gate charge: 930pC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |