Produkte > NEXPERIA > PMMT591A,235
PMMT591A,235

PMMT591A,235 Nexperia

PMMT591A-2938678.pdf Hersteller: Nexperia
Bipolar Transistors - BJT PMMT591A/SOT23/TO-236AB
auf Bestellung 5757 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
62+0.85 EUR
88+ 0.6 EUR
211+ 0.25 EUR
1000+ 0.18 EUR
2500+ 0.16 EUR
10000+ 0.12 EUR
20000+ 0.11 EUR
Mindestbestellmenge: 62
Produktrezensionen
Produktbewertung abgeben

Technische Details PMMT591A,235 Nexperia

Description: TRANS PNP 40V 1A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V, Frequency - Transition: 150MHz, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 250 mW.

Weitere Produktangebote PMMT591A,235 nach Preis ab 0.31 EUR bis 0.86 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PMMT591A,235 PMMT591A,235 Hersteller : Nexperia USA Inc. PMMT591A.pdf Description: TRANS PNP 40V 1A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
auf Bestellung 177 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
31+0.86 EUR
43+ 0.61 EUR
100+ 0.31 EUR
Mindestbestellmenge: 31
PMMT591A,235 PMMT591A,235 Hersteller : Nexperia USA Inc. PMMT591A.pdf Description: TRANS PNP 40V 1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Produkt ist nicht verfügbar