Produkte > NEXPERIA > PMN27XPE,115
PMN27XPE,115

PMN27XPE,115 Nexperia


PMN27XPE-268840.pdf Hersteller: Nexperia
MOSFET PMN27XPE/SC-74/REEL 7" Q1/T1 *
auf Bestellung 1222 Stücke:

Lieferzeit 14-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben

Technische Details PMN27XPE,115 Nexperia

Description: MOSFET P-CH 20V 4.4A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V, Power Dissipation (Max): 530mW (Ta), 8.33W (Tc), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V.

Weitere Produktangebote PMN27XPE,115

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PMN27XPE,115 PMN27XPE,115 Hersteller : Nexperia USA Inc. PMN27XPE.pdf Description: MOSFET P-CH 20V 4.4A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 530mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V
Produkt ist nicht verfügbar
PMN27XPE,115 PMN27XPE,115 Hersteller : Nexperia USA Inc. PMN27XPE.pdf Description: MOSFET P-CH 20V 4.4A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 530mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V
Produkt ist nicht verfügbar