PMN40SNAX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 4.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.7A, 10V
Power Dissipation (Max): 1.8W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 4.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.7A, 10V
Power Dissipation (Max): 1.8W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 4269 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.04 EUR |
30+ | 0.89 EUR |
100+ | 0.62 EUR |
500+ | 0.48 EUR |
1000+ | 0.39 EUR |
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Technische Details PMN40SNAX Nexperia USA Inc.
Description: MOSFET N-CH 60V 4.7A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 4.7A, 10V, Power Dissipation (Max): 1.8W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PMN40SNAX nach Preis ab 0.31 EUR bis 1.04 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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PMN40SNAX | Hersteller : Nexperia | MOSFET PMN40SNA/SOT457/SC-74 |
auf Bestellung 166709 Stücke: Lieferzeit 14-28 Tag (e) |
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PMN40SNAX | Hersteller : NEXPERIA |
Description: NEXPERIA - PMN40SNAX - Leistungs-MOSFET, n-Kanal, 60 V, 4.7 A, 0.029 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 4.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 650W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.029ohm |
auf Bestellung 3084 Stücke: Lieferzeit 14-21 Tag (e) |
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PMN40SNAX | Hersteller : NEXPERIA |
Description: NEXPERIA - PMN40SNAX - Leistungs-MOSFET, n-Kanal, 60 V, 4.7 A, 0.029 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 4.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 650W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.029ohm |
auf Bestellung 3084 Stücke: Lieferzeit 14-21 Tag (e) |
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PMN40SNAX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 19A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Technology: Trench Drain current: 3A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 76mΩ Pulsed drain current: 19A Gate charge: 14nC Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN40SNAX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 4.7A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.7A, 10V Power Dissipation (Max): 1.8W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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PMN40SNAX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 19A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Technology: Trench Drain current: 3A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 76mΩ Pulsed drain current: 19A Gate charge: 14nC Polarisation: unipolar |
Produkt ist nicht verfügbar |